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The IXGH48N60A3D1 is a single N-channel silicon IGBT from the IXYS GenX3 series, housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 300 A at 25°C. The device exhibits a low collector-emitter saturation voltage (Vce(sat)) of 1.18 V. Power dissipation capability is rated at 300 W, with an operating temperature range spanning from -55°C to +150°C. The component includes a gate-emitter leakage current specification of 100 nA.
Verify the specific suffix D1 against official datasheets to confirm pinout and electrical tolerances. Ensure the supplier provides traceable documentation matching the IXYS manufacturing records. Cross-reference the RoHS status with current regulatory requirements before finalizing procurement orders.
Select this component when a low Vce(sat) is critical for efficiency in high-current applications. The 300 A rating supports demanding load conditions within the TO-247AD thermal limits. Compare against other GenX3 variants if different switching speeds or package constraints are required by the circuit design.
This part belongs to the IXYS IXGH48N60 family, utilizing GenX3 trench gate technology. It serves as a high-performance alternative to older IGBT generations, offering improved energy efficiency. The TO-247AD package ensures compatibility with standard heatsinking solutions used in industrial power electronics.
Direct substitutes include IXGH48N60C3D1 and IXGH48N60A3D1 variations. Verify pin compatibility and exact Vce(sat) specifications before swapping. Consult IXYS documentation for any functional differences between A3 and C3 suffixes.