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Product Detailed Parameters
- Description：IGBT PT 600V TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 32A
- Power - Max：300 W
- Switching Energy：840µJ (on), 660µJ (off)
- Input Type：Standard
- Gate Charge：115 nC
- Td (on/off) @ 25°C：22ns/130ns
- Test Condition：480V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH48N60B3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3 technology. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 75 A at 25°C, with a maximum pulsed current of 150 A. The device exhibits a low saturation voltage of 2.5 V at 15 V gate drive and 75 A collector current. Packaged in a TO-247AD-3 through-hole housing, it supports power dissipation up to 300 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- GenX3 trench technology for optimized switching performance
- Low saturation voltage for reduced conduction losses
- Robust short-circuit capability
Applications
- Motor drives and inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix B3D1 against official datasheets to confirm package type and thermal characteristics. Ensure compatibility with existing PCB footprints for the TO-247AD-3 housing. Check RoHS compliance status if required by local regulations. Confirm availability through authorized distributors as lead times may vary based on production cycles.
Selection Notes
Select this component for medium-power applications requiring high efficiency and fast switching. Compare the 2.5 V Vce(sat) against alternative IGBTs to evaluate conduction loss trade-offs. Consider the 75 A continuous rating relative to peak load currents and derating requirements at elevated temperatures. Verify gate drive voltage compatibility with the specified 15 V test conditions.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, designed for medium-frequency switching applications. It complements other models like the IXSH series by offering higher current capacity while maintaining low saturation voltage. The TO-247AD-3 package provides reliable thermal management for industrial environments.
Replacement Considerations
Direct substitutes include the IXGH48N60C3D1, which shares similar electrical characteristics but may differ in specific testing conditions or packaging nuances. Cross-referencing with STMicroelectronics or Infineon equivalents requires careful verification of Vce(sat) and switching energy parameters.
