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The IXYS IXGH50N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST series. It features a silicon technology with a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 75 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.1 V and a fast reverse recovery time of 180 ns. Designed for through-hole mounting in TO-247AD packages, it supports junction temperatures up to 150°C and operates within a temperature range of -55°C to +150°C.
The IXGH50N60B is part of the IXYS HiPerFAST IGBT family, which focuses on balancing low conduction losses with manageable switching speeds. This specific model provides a 75 A current rating at 600 V, positioning it as a solution for industrial power conversion systems requiring robust performance in standard through-hole configurations.