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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-247AD
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：400 W
- Switching Energy：550µJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：18ns/190ns
- Test Condition：480V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH50N60B2 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a continuous collector current (Ic) of 75 A at 25°C. The device utilizes the HiPerFAST technology platform and is housed in a TO-247AD-3 through-hole package. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a power dissipation rating of 400 W, and an operating temperature range from -55°C to +150°C.
Feature Summary
- HiPerFAST IGBT technology for high-speed switching performance
- TO-247AD-3 flange-mount package for efficient thermal management
- Single configuration with robust short-circuit capability
Applications
- AC motor speed control drives
- DC servo and robot drive systems
- High-frequency DC choppers and converters
Procurement Notes
Verify component authenticity against official IXYS documentation due to potential market variations. Confirm RoHS compliance status and specific manufacturing lot dates during acquisition. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to soldering.
Selection Notes
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 75 A. Evaluate thermal resistance requirements relative to the TO-247AD-3 package limits. Compare switching energy losses against alternative IGBT families for efficiency optimization in power conversion circuits.
Part Context
This part belongs to the IXYS HiPerFAST series, designed for high-efficiency power switching. It complements other IXGH models like the IXGH50N60A and IXGH50N90B2D1 within the manufacturer's portfolio, offering a balance between voltage rating and current capacity for industrial power electronics.
Replacement Considerations
Direct substitutes may include IXGH50N60C2 or IXGT50N60C2, though pinout and thermal characteristics must be verified. Cross-reference datasheets for saturation voltage and gate charge compatibility before implementation.
