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The IXGH50N90B2D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, manufactured by IXYS. It utilizes a TO-247AD-3 through-hole package and operates with a maximum collector-emitter voltage of 900 V. The device supports a continuous collector current of 75 A at 25°C and a pulsed current of 200 A. Key electrical parameters include a saturation voltage of 2.7 V, power dissipation of 400 W, and a gate-emitter voltage range of -20 V to +20 V. It functions within a temperature range of -55°C to +150°C.
Verify the exact suffix against official datasheets, as variations like D1 indicate specific packaging or testing configurations. Confirm RoHS compliance status directly with the manufacturer documentation before integration. Ensure the component matches the required thermal and electrical specifications for the target design environment.
Select this component when a 900 V rating is required alongside high current handling up to 75 A continuous. The TO-247AD-3 package facilitates effective heat dissipation for high-power applications. Compare saturation voltage and switching characteristics against alternative IGBTs to ensure compatibility with the system's efficiency targets.
This part belongs to the IXYS IXGH50N90 series, which includes variants such as the IXGH50N60A and IXGH50N120C3D1. These components share similar packaging and general topology but differ in voltage ratings and specific performance metrics defined by their respective series designations.
Direct substitutes may include other 900 V IGBTs in TO-247 packages from manufacturers like Infineon or Mitsubishi. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets for equivalent saturation voltages and safe operating area limits.