IXGH50N90B2D1

Overview

The IXGH50N90B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing silicon technology. It is housed in a TO-247AD-3 through-hole package and belongs to the HiPerFAST series. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current of 50 A at 25°C, with a peak pulsed current rating of 200 A. The collector-emitter saturation voltage is specified at 2.7 V. It supports a power dissipation of 400 W and operates within a junction temperature range from -55°C to +150°C. The gate-emitter voltage limits are defined between -20 V and +20 V.

Feature Summary

• High-voltage capability rated at 900 V for robust performance in demanding switching applications.
• HiPerFAST technology design optimized for low conduction losses and efficient thermal management.
• Through-hole TO-247AD-3 packaging facilitates secure mounting and effective heat dissipation.

Applications

• Industrial motor drives and control systems
• High-frequency welding power supplies
• Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify component authenticity against official IXYS documentation prior to integration. Confirm that the specific part marking matches the IXGH50N90B2D1 designation to ensure correct voltage and current ratings. Check for physical damage to the TO-247AD leads and inspect the package integrity. Ensure storage conditions comply with moisture sensitivity levels to prevent internal degradation before soldering.

Selection Notes

Select this component when a 900 V blocking voltage is required for high-power switching circuits. The 50 A continuous current rating suits moderate-to-high power industrial loads. Compare the 2.7 V saturation voltage against alternative devices to evaluate conduction loss efficiency. Ensure the thermal design accommodates the 400 W dissipation limit within the specified operating temperature range.

Part Context

This IGBT is part of the IXGH50N90 family, designed for high-voltage applications. It complements other IXYS discrete semiconductors like the IXXH50N60B3D1, offering higher voltage tolerance compared to 600 V variants. The TO-247AD package provides a standardized footprint for thermal interface compatibility in power electronics assemblies.

Replacement Considerations

Direct substitutes require matching 900 V rating and similar current capacity. Verify pinout compatibility with the TO-247AD-3 configuration. Cross-reference datasheets for saturation voltage and switching speed differences to ensure circuit stability without redesign.