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The IXYS IXGH60N30C3 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 family. It features a TO-247AD-3 through-hole package and operates with a maximum collector-emitter voltage of 300 V. The device supports a continuous collector current of 60 A at 25°C and handles a pulsed collector current of 180 A. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a gate-emitter threshold voltage ranging from 3.5 V to 5.5 V, and a total gate charge of 90 nC. Thermal management is supported by a maximum power dissipation of 400 W and an operating junction temperature range from -55°C to +150°C.
Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate tape-and-reel packaging versus tube quantities. Ensure the supplier provides valid traceability documentation matching the datasheet specifications.
Select this component when a 300 V rating is required instead of higher voltage variants. Compare the 60 A continuous current capability against load requirements. Evaluate the 1.65 V saturation voltage for efficiency needs. Consider the TO-247AD-3 footprint compatibility during PCB layout design.
This IGBT belongs to the IXGH series, which utilizes GenX3 technology. It shares the same physical package as other devices in the lineup but differs in voltage and current ratings. The part is manufactured by Littelfuse following the acquisition of IXYS semiconductor assets.
Direct pin-compatible replacements within the same voltage class include the IXGH60N30A3D1. Higher voltage alternatives such as the IXGH60N60C3 are available if system voltage permits. Verify thermal resistance and gate charge parameters when substituting with parts from other manufacturers.