IXGH60N60B2

Overview

The IXYS IXGH60N60B2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST B2-Class series. It utilizes Silicon technology and features an electrically isolated back surface design within a TO-247AD-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a gate-emitter voltage range of ±20 V, a saturation voltage of 1.8 V at 30 A, and a power dissipation rating of 250 W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• HiPerFAST B2-Class architecture with electrically isolated back surface for enhanced reliability
• Low saturation voltage characteristics to minimize on-state conduction losses
• High switching speed capability suitable for medium-frequency applications

Applications

• AC motor speed control systems
• DC servo and robot drives
• Switch-mode and resonant-mode power supplies
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status and lot traceability before integration. Ensure thermal management solutions match the specified power dissipation limits. Validate that the TO-247AD-3 footprint aligns with existing PCB designs. Request original manufacturer documentation to confirm part revision levels.

Selection Notes

Select this component for applications requiring high voltage isolation and low conduction losses. The B2-Class technology offers improved ruggedness compared to standard PT IGBTs. Consider the 60 A current rating relative to peak load requirements. Evaluate thermal resistance values for heatsink sizing. Verify compatibility with standard gate drive voltages of 15 V.

Part Context

This IGBT belongs to the IXYS HiPerFAST family, designed for high-efficiency power conversion. The B2-Class designation indicates specific improvements in short-circuit withstand capability and robustness. It serves as a replacement for older discrete IGBT technologies in industrial power electronics. The TO-247AD-3 package provides mechanical stability for high-power mounting.

Replacement Considerations

Direct substitutes may include other HiPerFAST B2-Class devices from IXYS with matching voltage and current ratings. Cross-manufacturer replacements require verification of pinout compatibility and thermal characteristics. Ensure equivalent switching speeds and saturation voltages to maintain circuit performance.