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The IXYS IXGH6N170A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 12 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (Vce(sat)) of 4 V. It is housed in a TO-247AD package with through-hole mounting capability. The component supports a maximum power dissipation (Pd) of 75 W and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'A' against the manufacturer datasheet to confirm exact electrical tolerances and testing conditions. Ensure the TO-247AD footprint matches the target PCB layout. Confirm RoHS compliance status via the official documentation before integration into regulated products.
Select this component when a 1700 V blocking capability is required alongside moderate current handling. Compare the 4 V saturation voltage against alternative devices to evaluate conduction losses. Verify that the 75 W power dissipation rating aligns with the available heatsinking capacity in the final assembly design.
This part belongs to the IXYS High Voltage IGBT series, specifically utilizing NPT technology. It is distinct from lower voltage variants and higher current models within the same family. The TO-247AD package provides a balance between thermal management and mechanical stability for industrial power electronics.
Direct pin-compatible substitutes include the IXGH6N170. Verify electrical parameters such as Vce(sat) and switching times against the original datasheet to ensure circuit compatibility.