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The IXGH90N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology with XPT (Extra-Precision Trench) structure to achieve low saturation voltage and optimized switching performance. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 90 A at 25°C. Key electrical parameters include a typical turn-off fall time of 140 ns and a maximum power dissipation of 750 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247AD-3 package.
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AD-3 package dimensions match the intended PCB footprint and thermal management requirements. Ensure gate drive specifications align with the device's threshold voltage characteristics.
Select this component for applications requiring high current handling at 600V with moderate switching speeds. Compare the 90A rating against peak load currents to ensure adequate safety margins. Evaluate thermal resistance values to determine appropriate heatsinking solutions for the expected operating environment.
This part belongs to the IXYS GenX3 family of 600V IGBTs, designed for medium-frequency switching applications. It complements other models like the IXGH36N60B3 and IXGH56N60B3, offering higher current capacity while maintaining similar package constraints. The series targets cost-effective solutions for power conversion systems.
Direct replacements may include other 600V 90A IGBTs in TO-247 packages from manufacturers such as Infineon or Mitsubishi. Verify pinout compatibility and thermal characteristics when substituting. Cross-reference switching times and saturation voltages to ensure circuit performance remains within design limits.