IXGJ40N60C2D1

Overview

The IXGJ40N60C2D1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the HiPerFAST™ series and utilizes Planar Technology (PT). The device features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 75 A. It supports a pulse collector current of 150 A and has a maximum power dissipation of 300 W. The component is housed in a TO-268 package with through-hole mounting. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• High-speed switching capability designed for very high frequency applications
• Square Reverse Bias Safe Operating Area (RBSOA) for robust operation
• High current handling capability with MOS gate drive simplicity

Applications

• High-frequency power conversion circuits
• Industrial motor drives
• Switched-mode power supplies (SMPS)

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Procurement must rely on remaining distributor stock or verified direct substitutes such as IXXH50N60B3. Verify part authenticity and datasheet revisions before integration, as legacy components may have limited long-term supply availability.

Selection Notes

Select this IGBT for designs requiring high-speed switching and square RBSOA characteristics. Ensure the application circuit can accommodate the 600V breakdown voltage and 75A continuous current limits. Consider thermal management for the 300W dissipation rating in the TO-268 package. Evaluate alternative PT-type IGBTs if current requirements exceed specifications.

Part Context

The IXGJ40N60C2D1 is part of IXYS's HiPerFAST™ family of discrete semiconductors. This series focuses on high-performance IGBTs optimized for efficiency and speed. The specific model represents a planar technology variant designed to balance conduction losses with fast switching times, targeting demanding power electronics applications.

Replacement Considerations

Direct substitute: IXXH50N60B3.