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Product Detailed Parameters
- Description：IGBT 1700V 170A PLUS264
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：170 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：425 nC
- Td (on/off) @ 25°C：35ns/285ns
- Test Condition：850V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：PLUS264™
- Grade：-
- Qualification：-
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Overview
The IXGK100N170 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1700 V and a continuous collector current rating of 100 A at 25°C. The device utilizes Planar Technology (PT) for optimized switching performance. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.4 V at 100 A, a typical turn-off time of 160 ns, and a gate-emitter leakage current of 100 nA. Thermal characteristics specify a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.85°C/W.
Feature Summary
- High voltage capability with 1700 V collector-emitter breakdown rating suitable for demanding power applications.
- Planar technology design ensures robust switching performance and low conduction losses.
- Integrated anti-parallel diode provides efficient freewheeling current path in bridge configurations.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix or variant code against the manufacturer's latest datasheet to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status and packaging type directly with authorized distributors. Cross-reference part numbers carefully as IXYS product lines may undergo naming conventions changes or obsolescence notices.
Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling up to 100 A. Ensure the cooling solution can maintain the junction temperature below 150°C given the 0.85°C/W thermal resistance. Evaluate switching frequency requirements against the 160 ns turn-off time to manage total power dissipation effectively within the system constraints.
Part Context
This IGBT belongs to the IXGK series, designed for high-power industrial applications. It represents a standard planar technology offering from IXYS, balancing conduction efficiency with switching speed. The TO-264 package facilitates through-hole mounting on large heatsinks common in heavy-duty power electronics infrastructure.
Replacement Considerations
Potential substitutes include other 1700V, 100A IGBTs in similar packages such as the IXGH100N170 or comparable models from other manufacturers like Infineon or Mitsubishi. Verify pinout compatibility and thermal resistance values before substitution.
