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Product Detailed Parameters
- Description：IGBT PT 1200V 240A TO-264
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：240 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：10mJ (on), 33mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：40ns/490ns
- Test Condition：960V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK120N120A3 is a single N-channel silicon IGBT from the GenX3 series, housed in a TO-264-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 240 A at 25°C, with a peak pulsed current capability of 600 A. The device exhibits a collector-emitter saturation voltage of 2.2 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 830 W, supporting operation within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes GenX3 technology for optimized switching performance
- Designed for high-power industrial applications requiring robust thermal handling
- Single configuration suitable for bridge and chopper circuits
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify component authenticity against manufacturer documentation before integration. Confirm RoHS compliance status via official datasheets. Ensure ordering suffixes match specific electrical tolerances if required by design specifications. Cross-reference part numbers with authorized distributors to avoid counterfeit risks.
Selection Notes
Select this component for designs requiring high current density in a standard through-hole footprint. Evaluate thermal management requirements based on the 830 W power dissipation rating. Compare saturation voltage characteristics against alternative GenX3 variants to balance conduction losses with switching frequency needs.
Part Context
This device belongs to the IXYS GenX3 family of insulated gate bipolar transistors. The series is engineered for medium to high-power conversion systems. The TO-264-3 package provides enhanced thermal conductivity compared to smaller form factors, facilitating heat dissipation in dense PCB layouts.
Replacement Considerations
The IXGK120N120B3 serves as a related variant within the same series, offering different saturation voltage characteristics. Verify pinout compatibility and thermal resistance parameters when substituting components in existing circuit designs.
