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Product Detailed Parameters
- Description：IGBT PT 1200V 200A TO-264
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：370 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：5.5mJ (on), 5.8mJ (off)
- Input Type：Standard
- Gate Charge：470 nC
- Td (on/off) @ 25°C：36ns/275ns
- Test Condition：600V, 100A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK120N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3™ series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-264 through-hole package. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 200 A at 25°C. Its collector-emitter saturation voltage is specified at 3 V, with a power dissipation rating of 830 W. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- GenX3™ technology for optimized switching performance
- High current density capability
- Robust thermal management design
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter circuits
Procurement Notes
Verify the specific manufacturer datasheet for the IXGK120N120B3 to confirm RoHS compliance status and exact electrical tolerances. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the part number against the official IXYS catalog to validate current production status and any recent engineering change notices before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capabilities combined with substantial continuous current handling. The TO-264 package facilitates effective heat sinking for high-power applications. Evaluate the thermal resistance characteristics against the expected ambient conditions and duty cycle requirements to ensure reliable operation within the specified junction temperature limits.
Part Context
This IGBT belongs to the IXGK120N120 family, which includes variants such as the IXGK120N120A3. While sharing similar voltage ratings and package types, differences exist in saturation voltage and current specifications among family members. The B3 suffix denotes specific manufacturing or testing parameters defined by IXYS for this particular iteration of the GenX3™ product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers or different suffixes within the same series.
