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Product Detailed Parameters
- Description：IGBT PT 600V 200A TO-264
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 120A
- Power - Max：660 W
- Switching Energy：2.4mJ (on), 5.5mJ (off)
- Input Type：Standard
- Gate Charge：350 nC
- Td (on/off) @ 25°C：60ns/200ns
- Test Condition：480V, 100A, 2.4Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK120N60B is a HiPerFAST PT IGBT with a 600V collector-emitter breakdown voltage and a continuous collector current of 120A at 90°C. It features a low saturated collector-emitter voltage of 2.1V maximum at IC=IC90 and VGE=15V. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 660W of power at 25°C case temperature. Key switching parameters include a turn-off energy loss (Eoff) of 5.5mJ to 9.6mJ and a total gate charge of 350nC. It utilizes the TO-264AA package.
Feature Summary
- HiPerFAST technology providing high current capability and fast switching performance
- Low VCE(sat) design for minimized on-state conduction losses
- MOS gate structure enabling simple drive requirements
Applications
- AC motor speed drives
- DC servo and robot drives
- DC choppers
- Uninterruptible Power Supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm RoHS compliance status and check for obsolescence notices, as this specific part number may be discontinued. Ensure thermal interface materials match the specified RthJC and RthCS values for proper heat dissipation in the target application.
Selection Notes
Select based on required operating voltage and current ratings relative to the 600V and 120A limits. Evaluate thermal management needs against the 660W power dissipation rating. Consider switching frequency constraints due to the 5.5mJ to 9.6mJ turn-off energy loss characteristics. Verify compatibility with standard 15V gate drive voltages.
Part Context
This component belongs to the HiPerFAST family of insulated gate bipolar transistors manufactured by IXYS, now part of Littelfuse. It represents a medium-speed, low saturation voltage PT IGBT designed for robust industrial power conversion applications requiring high current handling capabilities.
Replacement Considerations
Check for direct replacements such as the IXGX120N60B variant. Review updated product lines from Littelfuse for newer generations of HiPerFAST IGBTs that offer improved thermal or electrical performance while maintaining pin compatibility.
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter breakdown voltage (VCES) is 600V.
What is the typical turn-off time?
The turn-off delay time (td(off)) ranges from 200ns to 360ns, and the fall time (tfi) ranges from 160ns to 280ns under standard test conditions.
Is this component suitable for high-frequency operation?
It is classified as a medium-speed IGBT with significant turn-off energy losses, making it more suitable for lower frequency applications like motor drives rather than high-frequency switch-mode power supplies.
