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The IXGK120N60B3 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 280 A at 25°C. The device has a power dissipation rating of 780 W and operates within a temperature range of -55°C to +150°C. Packaged in a TO-264 (TO-264-3) through-hole housing, it utilizes PT-Mid frequency technology for optimized switching performance.
Verify component authenticity against official IXYS datasheets before integration. Confirm that the TO-264 package dimensions match the target PCB footprint. Ensure gate drive circuits comply with the specified voltage limits to prevent device failure during operation.
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 280 A. Consider the 780 W power dissipation limit when designing heatsinking solutions. Compare against higher current variants if load requirements exceed the rated continuous collector current specifications.
This IGBT belongs to the IXGK120N120 family structure, specifically tailored for 600 V class operations. It shares design lineage with other GenX3 devices but differs in voltage ratings and current capacity compared to its 1200 V counterparts like the IXGK120N120B3.