IXGK35N120B

Overview

The IXGK35N120B is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a breakdown voltage of 1200 V and a continuous collector current rating of 35 A at 25°C. The device incorporates an integrated anti-parallel diode, with the diode rated for a forward current of 35 A at 90°C case temperature. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.6 V at 70 A and a typical turn-off time of 140 ns. The component is housed in a TO-247AD package designed for through-hole mounting.

Feature Summary

• High voltage capability suitable for demanding power switching applications
• Integrated fast recovery anti-parallel diode for efficient commutation
• Robust short-circuit withstand capability for system protection

Applications

• AC motor speed control systems
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm exact electrical limits and thermal characteristics before integration. Ensure that the selected heat sink and gate drive circuitry align with the component's specified operating temperatures and switching speeds. Confirm RoHS compliance status if required by the final assembly specifications.

Selection Notes

Select this component for designs requiring 1200 V blocking voltage and moderate current handling up to 35 A. Consider the thermal resistance values provided in the official datasheet when designing the cooling solution. Evaluate the switching losses against the application's frequency requirements to ensure efficiency targets are met without exceeding junction temperature limits.

Part Context

This part belongs to the IXYS High Voltage IGBT family, specifically designed for medium-power industrial applications. It utilizes planar trench technology to achieve low conduction losses while maintaining robust avalanche ruggedness. The TO-247AD package facilitates easy mounting on heatsinks, making it suitable for various power electronics topologies.

Replacement Considerations

Potential substitutes include other 1200 V, 35 A IGBTs with integrated diodes from the same manufacturer or competitors, such as the IXGH series or equivalent parts from Infineon and Mitsubishi, provided pinouts and electrical parameters match.