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The IXGK400N30A3 is a GenX3™ technology N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter voltage (VCEO) of 300 V and a continuous collector current (Ic) of 66 A at 25°C. The device utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage (VceSAT) of 3.3 V, a gate-emitter voltage rating (VGEO) of ±20 V, and a power dissipation (Pd) of 416 W. It operates within a temperature range of -55°C to 150°C with a switching speed of 50 kHz.
Verify the specific suffix 'A3' against official IXYS documentation to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid RoHS compliance certificates. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing standards and parameter tolerances before integration into production designs.
Select this component when a 300V blocking capability and moderate current handling are required in a standard TO-247 footprint. Consider the 3.3 V saturation voltage for efficiency calculations in low-voltage high-current circuits. Evaluate the 416 W power dissipation limit against the expected thermal management solution and ambient operating conditions to ensure reliable long-term operation.
This IGBT belongs to the IXYS GenX3™ family, which employs phase trapping technology to enhance switching performance and reduce tail current. The GenX3 series is engineered for applications demanding high reliability and efficient power conversion. The TO-247 package provides robust mechanical stability and effective heat dissipation capabilities suitable for industrial power electronics environments.
Publicly confirmed substitute part numbers for the IXGK400N30A3 are not available in the provided source material.