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Product Detailed Parameters
- Description：IGBT 600V 75A TO-264
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Power - Max：300 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：50ns/200ns
- Test Condition：480V, 50A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK50N60BD1 is a high-voltage N-channel IGBT module from IXYS, designed for demanding power conversion applications. It features a 600V collector-emitter voltage rating and a continuous collector current of 50A at 25°C case temperature. The device utilizes IXYS' Field-Stop Trench technology to achieve low saturation voltage and optimized switching characteristics. Packaged in a compact TO-247AD insulated package, it provides electrical isolation between the terminals and the mounting base, facilitating efficient thermal management and simplified integration into industrial motor drives and inverter circuits.
Feature Summary
- Field-Stop Trench technology for enhanced efficiency
- Insulated TO-247AD package for safe mounting
- Optimized switching performance with low losses
Applications
- Industrial motor drives
- Inverter circuits
- Switched-mode power supplies
Procurement Notes
Verify the specific suffix code on the component marking against official IXYS documentation to confirm exact electrical parameters and packaging variations. Ensure the supplier provides valid traceability documents and confirms the part is new original stock. Cross-reference the datasheet revision date to ensure compatibility with current design specifications.
Selection Notes
Select this component based on its 600V blocking capability and 50A current handling relative to the specific load requirements. Evaluate the thermal resistance characteristics of the TO-247AD package against the available heatsinking solution. Confirm that the gate drive voltage levels are compatible with the specified threshold and saturation characteristics for optimal performance.
Part Context
This module belongs to IXYS' IKW series of insulated gate bipolar transistors. It represents a generation of devices focused on reducing conduction and switching losses through advanced trench gate architecture. The series is widely recognized for reliability in medium-power industrial applications requiring robust voltage ratings.
Replacement Considerations
Potential substitutes include other 600V, 50A IGBTs in TO-247 packages such as those from Infineon or Mitsubishi. Verify pinout compatibility and thermal interface requirements before substitution. Ensure equivalent switching speeds and saturation voltages to maintain system efficiency.
