IXGK60N60

Overview

The IXGK60N60 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600V and utilizes the HDMOSTM process technology to achieve low saturation voltage for minimized on-state conduction losses. The device is housed in international standard packages including TO-247AD, TO-264, and TO-268. It offers high current handling capability and simple MOS gate turn-on drive characteristics.

Feature Summary

• Utilizes new generation HDMOSTM process technology
• Low VCE(sat) for minimum on-state conduction losses
• High current handling capability
• Simple MOS gate turn-on drive

Applications

• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify package variant availability as the component supports multiple JEDEC standard packages including TO-247AD, TO-264, and TO-268. Confirm specific suffix requirements if precise thermal or mechanical mounting specifications are needed for the target application design.

Selection Notes

Select this component for applications requiring efficient high-power switching with low conduction losses. The HDMOSTM process ensures robust performance. Ensure the chosen package variant matches the PCB footprint and thermal management strategy of the final assembly.

Part Context

This IGBT belongs to the HiPerFAST family, designed for high-efficiency power conversion. It integrates advanced semiconductor processing to balance switching speed and conduction efficiency, suitable for demanding industrial and consumer power electronics environments.

Replacement Considerations

Direct substitutes include IXGK60N60B2D1 and IXGK60N60C2D1 from IXYS. Cross-brand replacements require matching 600V rating, current capacity, and package dimensions.