SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGK60N60C2D1 is a HiPerFAST IGBT with an integrated anti-parallel FRED diode, rated at 600 V collector-emitter voltage and 75 A continuous collector current at 25°C. It features a maximum saturated collector-emitter voltage of 2.5 V at 50 A and 15 V gate drive. The device utilizes C2-Class technology for high-speed switching, with typical turn-off time of 35 ns and total gate charge of 146 nC. Thermal resistance from junction to case is 0.26 K/W for the IGBT and 0.65 K/W for the diode. It is housed in a TO-264 AA or PLUS247 package.
Verify the specific package variant required, as the datasheet covers both TO-264 AA (IXGK suffix) and PLUS247 (IXGX suffix). Confirm that the C2 ordering suffix corresponds to the intended electrical characteristics and pinout configuration before finalizing procurement orders.
Select this component for designs requiring combined switching and freewheeling functions in a compact footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistances. Verify that the gate drive voltage aligns with the 15 V test conditions for optimal saturation voltage performance.
This part belongs to the IXYS HiPerFAST family of C2-Class high-speed IGBTs. It is designed to replace discrete IGBT and diode combinations, offering space savings and simplified assembly through a single-screw mounting option. The series targets high-efficiency power conversion applications.
Direct substitutes include the IXGX60N60C2D1, which shares identical electrical specifications but utilizes the PLUS247 package instead of the TO-264 AA form factor.
The datasheet specifies a typical peak reverse recovery current (IRM) of 8.3 A when tested at IF = 60 A, -diF/dt = 100 A/μs, TJ = 100°C, and VR = 100 V.
The thermal resistance from junction to case (RthJC) is 0.26 K/W for the IGBT and 0.65 K/W for the integrated FRED diode.
The continuous gate-emitter voltage is limited to ±20 V, while the transient maximum rating allows up to ±30 V.