IXGK60N60C2D1

IXGK60N60C2D1

  • Description:IGBT PT 600V 75A TO-264
  • Series:HiPerFAST™

SKU:2c9bfec60c57 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 600V 75A TO-264
  • Series:HiPerFAST™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 50A
  • Power - Max:480 W
  • Switching Energy:400µJ (on), 480µJ (off)
  • Input Type:Standard
  • Gate Charge:146 nC
  • Td (on/off) @ 25°C:18ns/95ns
  • Test Condition:400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr):35 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264 (IXGK)
  • Grade:-
  • Qualification:-

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IXGK60N60C2D1

Overview

The IXGK60N60C2D1 is a HiPerFAST IGBT with an integrated anti-parallel FRED diode, rated at 600 V collector-emitter voltage and 75 A continuous collector current at 25°C. It features a maximum saturated collector-emitter voltage of 2.5 V at 50 A and 15 V gate drive. The device utilizes C2-Class technology for high-speed switching, with typical turn-off time of 35 ns and total gate charge of 146 nC. Thermal resistance from junction to case is 0.26 K/W for the IGBT and 0.65 K/W for the diode. It is housed in a TO-264 AA or PLUS247 package.

Feature Summary

  • Integrates a high-frequency IGBT and a Fast Recovery Epitaxial Diode (FRED) with soft recovery characteristics into a single component.
  • Features a square Reverse Biased Safe Operating Area (RBSOA) for robust performance under clamped inductive load conditions.
  • Utilizes MOS gate structure to simplify drive circuitry requirements while maintaining high current handling capability.

Applications

  • Switch-mode and resonant-mode power supplies
  • Uninterruptible power supplies (UPS)
  • DC choppers
  • AC motor speed control
  • DC servo and robot drives

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-264 AA (IXGK suffix) and PLUS247 (IXGX suffix). Confirm that the C2 ordering suffix corresponds to the intended electrical characteristics and pinout configuration before finalizing procurement orders.

Selection Notes

Select this component for designs requiring combined switching and freewheeling functions in a compact footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistances. Verify that the gate drive voltage aligns with the 15 V test conditions for optimal saturation voltage performance.

Part Context

This part belongs to the IXYS HiPerFAST family of C2-Class high-speed IGBTs. It is designed to replace discrete IGBT and diode combinations, offering space savings and simplified assembly through a single-screw mounting option. The series targets high-efficiency power conversion applications.

Replacement Considerations

Direct substitutes include the IXGX60N60C2D1, which shares identical electrical specifications but utilizes the PLUS247 package instead of the TO-264 AA form factor.

FAQ

What is the peak reverse recovery current (IRM) specification?

The datasheet specifies a typical peak reverse recovery current (IRM) of 8.3 A when tested at IF = 60 A, -diF/dt = 100 A/μs, TJ = 100°C, and VR = 100 V.

How does the thermal resistance differ between the IGBT and the diode?

The thermal resistance from junction to case (RthJC) is 0.26 K/W for the IGBT and 0.65 K/W for the integrated FRED diode.

What are the maximum transient gate-emitter voltage limits?

The continuous gate-emitter voltage is limited to ±20 V, while the transient maximum rating allows up to ±30 V.

IXGK60N60C2D1IXGK60N60C2D1

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