SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGK64N60B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, utilizing XPT technology. It features a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 128 A at 25°C. The device has a typical saturated collector-emitter voltage of 1.95 V and a power dissipation rating of 500 W. It operates within a junction temperature range of -55°C to +175°C.
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS compliance status as required by project specifications. Ensure proper handling procedures are followed due to electrostatic sensitivity. Validate package dimensions against PCB footprint requirements before finalizing procurement decisions.
Select this component when a 600V IGBT with high current capability is needed. Compare saturation voltage and switching speeds against alternative devices in the same voltage class. Consider thermal management solutions suitable for the TO-247AD package. Verify gate drive compatibility with standard logic levels.
This part belongs to the IXYS GenX3 family of IGBTs, designed for medium-frequency applications. The XPT technology provides a balance between low on-state voltage and fast switching characteristics. It is commonly used in industrial power conversion systems where reliability and efficiency are critical.
Direct replacements may include other GenX3 series parts with similar voltage and current ratings. Cross-reference with IXYS or Littelfuse documentation for pin-compatible alternatives. Verify electrical parameters match original design requirements before substitution.