IXGK72N60B3H1

$8.65

Description：IGBT PT 600V 75A TO-264
Series：GenX3™

SKU:879c1032db3d Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 75A TO-264
Series：GenX3™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：450 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 60A
Power - Max：540 W
Switching Energy：1.4mJ (on), 1mJ (off)
Input Type：Standard
Gate Charge：225 nC
Td (on/off) @ 25°C：31ns/152ns
Test Condition：480V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)：140 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264 (IXGK)
Grade：-
Qualification：-

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IXGK72N60B3H1

Overview

The IXGK72N60B3H1 is a GenX3™ technology Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600V collector-emitter voltage rating and supports a continuous collector current of 72A, with a maximum power dissipation of 540W. The device utilizes the XPT and GenX3 technologies to optimize conduction and switching losses for medium-frequency applications ranging from 5kHz to 40kHz. It is housed in a TO-264 package and includes an integrated anti-parallel diode.

Feature Summary

Incorporates GenX3™ and XPT technologies for optimized low conduction and switching losses
Designed for medium-frequency switching operations between 5kHz and 40kHz
Features a square Reverse Bias Safe Operating Area (RBSOA)
Integrates an anti-parallel diode within the single IGBT configuration

Applications

Medium-frequency power conversion systems
Industrial motor drives
Uninterruptible Power Supplies (UPS)
Induction heating applications

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified partners. Confirm that the specific suffix H1 matches the required pinout and thermal characteristics for the target PCB footprint. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering to prevent package damage during reflow processes.

Selection Notes

Select this component when designing circuits requiring efficient performance at switching frequencies up to 40kHz. The GenX3™ architecture provides superior trade-offs between saturation voltage and switching energy compared to standard PT IGBTs. Consider the integrated diode's reverse recovery characteristics if high-speed commutation is required in the bridge topology.

Part Context

This part belongs to the IXYS IXGK series, which focuses on high-performance IGBTs for industrial and traction applications. The GenX3™ generation represents a significant advancement in silicon technology, offering reduced gate charge and improved thermal stability. It serves as a key component in modern power electronics where efficiency and compactness are critical design constraints.