IXGK75N250

IXGK75N250

$92.24
  • Description:IGBT NPT 2500V 170A TO-264
  • Series:-

SKU:2ea395dfb8a3 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 2500V 170A TO-264
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):2500 V
  • Current - Collector (Ic) (Max):170 A
  • Current - Collector Pulsed (Icm):530 A
  • Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 150A
  • Power - Max:780 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:410 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264 (IXGK)
  • Grade:-
  • Qualification:-

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IXGK75N250

Overview

The IXGK75N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 2500V and supports a continuous collector current of 75A at 25°C. The device utilizes the PLUS247 package, designed for robust thermal performance in demanding power electronics applications. Key electrical characteristics include a maximum gate-emitter voltage of ±20V and a specified saturation voltage under rated conditions. This component is engineered specifically for capacitor discharge circuits, offering reliable switching capabilities for high-energy pulse generation systems.

Feature Summary

  • Designed specifically for high-energy capacitor discharge applications
  • High voltage rating of 2500V for robust insulation and safety
  • PLUS247 package provides enhanced thermal dissipation capabilities

Applications

  • Capacitor discharge welding systems
  • Pulse power generation equipment
  • High-voltage testing apparatus

Procurement Notes

Verify the exact datasheet revision and manufacturer documentation when sourcing this component. Confirm that the PLUS247 package dimensions match your PCB layout requirements. Ensure that the thermal management solution aligns with the device's power dissipation specifications to maintain safe operating temperatures during high-current discharge cycles.

Selection Notes

Select this IGBT when designing circuits requiring high voltage isolation and significant pulsed current handling. The 2500V rating makes it suitable for medium-to-high voltage DC bus applications. Consider the thermal resistance of the PLUS247 package when determining heatsink requirements. Verify that the gate drive circuitry can handle the required voltage levels safely.

Part Context

This component belongs to IXYS' portfolio of high-voltage IGBTs tailored for specialized industrial applications. The IXGK series focuses on capacitor discharge technology, distinguishing itself from general-purpose switching transistors through its optimized design for high peak currents and rapid energy release scenarios typical in industrial processing and testing environments.

Replacement Considerations

Check for electrically equivalent high-voltage IGBTs in the PLUS247 package. Verify that any substitute maintains the 2500V VCES rating and comparable current handling capabilities. Ensure pinout compatibility and similar thermal characteristics to avoid redesigning the cooling infrastructure.

IXGK75N250IXGK75N250
$92.24
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