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Product Detailed Parameters
- Description：IGBT PT 1200V 260A TO-264
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：260 A
- Current - Collector Pulsed (Icm)：580 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 82A
- Power - Max：1250 W
- Switching Energy：5.5mJ (on), 12.5mJ (off)
- Input Type：Standard
- Gate Charge：340 nC
- Td (on/off) @ 25°C：34ns/265ns
- Test Condition：600V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK82N120A3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It features a TO-264-3 package designed for screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 830 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes GenX3 technology for optimized switching performance
- Designed for high-power density applications with low thermal resistance
- Features robust construction suitable for industrial environments
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific manufacturer datasheet for the IXGK82N120A3 to confirm current availability and lead times. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the part number with official distributor catalogs to validate authenticity and technical specifications before procurement.
Selection Notes
Select this component for circuits requiring a 1200V blocking capability and 120A continuous current handling in a TO-264-3 form factor. Consider the 2.2V saturation voltage for conduction loss calculations. Verify that the thermal management solution can dissipate up to 830W while maintaining junction temperatures within the specified operational limits.
Part Context
This IGBT belongs to the IXYS GenX3 family, which utilizes trench gate technology to reduce switching losses. The TO-264-3 package provides a standardized footprint for high-current modules, facilitating integration into existing power electronics designs that require reliable semiconductor switching components.
Replacement Considerations
Direct substitutes may include other GenX3 series devices with similar voltage and current ratings in the TO-264-3 package. Verify pinout compatibility and thermal characteristics when considering alternative part numbers from the same manufacturer or other vendors.
