IXGK82N120B3

Overview

The IXGK82N120B3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a silicon construction with a single configuration housed in a TO-264 package. The device supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 230A at 25°C. Power dissipation is rated at 1250W, with an operating temperature range from -55°C to +175°C.

Feature Summary

• Utilizes GenX3™ technology for optimized switching performance
• Designed for high-power industrial applications
• Features robust thermal characteristics for efficient heat management

Applications

• High-power motor drives
• Industrial power supplies
• Inverter systems

Procurement Notes

Verify the specific datasheet version and electrical parameters against the manufacturer's official documentation before integration. Confirm that the TO-264 package dimensions and mounting requirements align with the target PCB or heatsink design. Ensure compliance with RoHS directives if required by the end product specifications.

Selection Notes

Select this component for applications requiring high current handling and voltage blocking capabilities within the GenX3™ family. Consider the thermal resistance and power dissipation limits when designing the cooling system. Compare saturation voltage and switching times against alternative IGBTs to ensure optimal efficiency for the specific circuit topology.

Part Context

This part belongs to the IXYS GenX3™ series of IGBTs, which are engineered for high-efficiency power switching. The series offers improved trade-offs between conduction losses and switching speeds compared to previous generations, making it suitable for demanding power electronics environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.