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Product Detailed Parameters
- Description：IGBT 600V 50A TO-204AE
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：-
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AE
- Supplier Device Package：TO-204AE
- Grade：-
- Qualification：-
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Overview
The IXYS IXGM30N60 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It utilizes Silicon technology and features a TO-204AE through-hole package configuration. The device supports a collector-emitter breakdown voltage of 600 V and delivers a continuous collector current of 50 A. Key electrical parameters include a maximum power dissipation of 200 W and a gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -55°C to +150°C, ensuring reliability in demanding thermal environments.
Feature Summary
- High-speed switching capability optimized for efficient power conversion
- Low saturation voltage characteristics for reduced conduction losses
- Robust thermal performance suitable for high-power density designs
Applications
- Motor drive inverters
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon order confirmation. Ensure that the TO-204AE package dimensions match the target PCB footprint and thermal management requirements. Confirm RoHS compliance status with the supplier prior to finalizing procurement specifications.
Selection Notes
Select this component for circuits requiring fast switching speeds combined with moderate current handling capabilities. Evaluate the thermal resistance characteristics against the system's heat sink capacity. Consider the gate charge requirements when designing the driver circuitry to ensure adequate switching performance without excessive drive power.
Part Context
This IGBT belongs to the IXYS discrete transistor portfolio, specifically engineered for general-purpose power electronics. It represents a standard silicon-based solution within the manufacturer's lineup, offering a balance between switching speed and voltage blocking capability for industrial and consumer applications.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When replacing, verify equivalent voltage, current, and package specifications. Cross-reference with similar IXYS series or other manufacturers' TO-204AE packaged IGBTs if availability is an issue.
