IXGN100N160A

IXGN100N160A

  • Description:IGBT MODULE 1600V 200A SOT227B
  • Series:-

SKU:1e64f20e70d4 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MODULE 1600V 200A SOT227B
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):1600 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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IXGN100N160A

Overview

The IXGN100N160A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a rated collector-emitter voltage of 1600V and a continuous collector current capacity of 200A. The device utilizes Gen5 XPT technology to achieve low switching losses and low gate charge characteristics. It is housed in a SOT227B package designed for chassis mounting, ensuring robust thermal performance and electrical isolation suitable for demanding power conversion applications.

Feature Summary

  • High voltage capability with 1600V blocking rating
  • High current handling up to 200A continuous collector current
  • Gen5 XPT technology for optimized switching efficiency
  • Low gate charge reducing driver power requirements

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems
  • Welding equipment inverters

Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with existing designs. Confirm that the SOT227B package dimensions match the thermal management infrastructure. Request batch traceability documents and RoHS compliance certificates from authorized distributors to guarantee component authenticity and quality standards.

Selection Notes

Select this component when high voltage isolation and substantial current handling are required in a compact form factor. The Gen5 XPT technology offers a balance between conduction and switching losses, making it suitable for medium-frequency applications. Ensure the gate drive circuitry supports the specified voltage levels and that the chassis mounting interface can dissipate the expected thermal load effectively.

Part Context

This IGBT module belongs to IXYS's Gen5 XPT family, which integrates epi-planar trench gate technology with field-stop structures. This lineage emphasizes improved short-circuit withstand capability and reduced switching energy compared to previous generations. The SOT227B package is a standard industry format for high-power modules, facilitating easy integration into existing thermal and mechanical designs.

Replacement Considerations

Direct replacements should be sought within the IXYS IXGN series or comparable high-voltage IGBT modules from other manufacturers offering similar 1600V/200A ratings. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets for switching time variations to ensure system stability.

IXGN100N160AIXGN100N160A

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