IXGN200N60A2

IXGN200N60A2

  • Description:IGBT MOD 600V 200A 700W SOT227B
  • Series:-

SKU:03648c71ce05 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 200A 700W SOT227B
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:1.35V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:700 W
  • Current - Collector Cutoff (Max):50 µA
  • Input Capacitance (Cies) @ Vce:9.9 nF @ 25 V

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IXGN200N60A2

Overview

The IXGN200N60A2 is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a 600V collector-emitter voltage rating and supports continuous collector currents up to 200A. The device utilizes XPT technology to achieve low saturation voltage, enhancing efficiency in high-current applications. Packaged in the standard SOT-227B form factor with aluminum nitride isolation, it offers robust thermal performance and high isolation voltage capabilities for demanding power electronics environments.

Feature Summary

  • Utilizes XPT technology for optimized trade-off between conduction losses and switching speed
  • Features aluminum nitride substrate for superior thermal conductivity and high power dissipation
  • Provides high electrical isolation voltage for safe operation in isolated circuits
  • Designed with low package inductance to facilitate easy driving and protection

Applications

  • AC motor speed control systems
  • DC servo and robot drive inverters
  • Uninterruptible power supplies (UPS)
  • Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix against official IXYS documentation to confirm exact thermal characteristics and pinout compatibility. Ensure the sourcing channel provides valid traceability for industrial-grade components. Cross-reference datasheet revisions to confirm material compliance and packaging specifications before integration into production designs.

Selection Notes

Select this component for applications requiring high current density within a standard footprint. Evaluate thermal management requirements based on the specified power dissipation limits. Confirm that the gate drive circuitry aligns with the device's input capacitance and charge requirements for optimal switching performance.

Part Context

This module belongs to the IXYS HiPerFAST IGBT family, designed for high-efficiency power conversion. It integrates advanced trench gate technology with field-stop structures to minimize switching losses. The series is widely recognized for reliability in industrial power electronics and renewable energy infrastructure.

Replacement Considerations

Direct replacements include IXGN200N60C2 or IXGN200N60C2D1. Verify mechanical mounting dimensions and electrical parameters match the original design requirements before substitution.

IXGN200N60A2IXGN200N60A2

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