IXGN50N120C3H1

Overview

The IXGN50N120C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an integrated anti-parallel ultra-fast diode and belongs to the GenX3™ technology family with XPT™ field stopping. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. It utilizes a TO-247AD package for through-hole mounting, providing robust thermal performance suitable for high-frequency power switching applications up to 50 kHz.

Feature Summary

• Integrated anti-parallel ultra-fast recovery diode for simplified circuit design
• Optimized for low switching losses and high power density
• Square Reverse Bias Safe Operating Area (RBSOA) for reliable operation
• Positive thermal coefficient of saturation voltage for easy parallel operation

Applications

• High frequency power inverters
• Uninterruptible Power Supplies (UPS)
• Motor drive systems
• Switched Mode Power Supplies (SMPS)

Procurement Notes

Verify component authenticity against official IXYS documentation. Confirm that the specific suffix denotes the integrated diode variant. Ensure the TO-247AD package matches the target PCB footprint. Check for RoHS compliance status if required by local regulations. Validate datasheet revisions prior to final design integration.

Selection Notes

Select this component for designs requiring 1200 V blocking capability with moderate current handling. The integrated diode eliminates the need for external freewheeling components in half-bridge configurations. Consider thermal management requirements given the 50 A rating. Verify gate drive compatibility with standard logic levels. Evaluate switching frequency constraints relative to the 50 kHz specification.

Part Context

This IGBT is part of IXYS's GenX3™ series, which utilizes XPT™ technology to balance conduction and switching losses. It serves as a discrete solution for medium-power conversion stages. The inclusion of the fast diode makes it distinct from non-diode variants like the IXYH series. It targets industrial and commercial power electronics markets.

Replacement Considerations

Direct substitutes include other IXYS GenX3™ devices with similar ratings, such as the IXYN100N120C3H1 for higher current needs. Cross-brand replacements require matching voltage, current, and package dimensions. Verify reverse recovery characteristics of the integrated diode when substituting with different manufacturers' parts.