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Product Detailed Parameters
- Description：IGBT 1000V 24A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：2.5mJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：100ns/850ns
- Test Condition：800V, 12A, 120Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP12N100A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1000 V and a continuous collector current rating of 12 A at 25°C. The device utilizes the HiPerFAST process technology for optimized switching performance. It is housed in a TO-220AB package with three leads, designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability suitable for demanding power electronics applications
- Integrated anti-parallel Fast Recovery Epitaxial Diode (FRED) for simplified circuit design
- Optimized for low conduction losses via advanced semiconductor processing
Applications
- Switch-mode power supplies
- Uninterruptible power supplies (UPS)
- DC choppers and motor drives
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the selected variant matches the required thermal management specifications for the intended enclosure. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a combined IGBT and diode solution is required in a standard TO-220 package. Evaluate the thermal resistance characteristics against the system's heat sink capabilities. Confirm that the gate drive voltage levels are compatible with the specified threshold requirements for reliable switching operation.
Part Context
This part belongs to the IXYS HiPerFAST family of high-performance power semiconductors. The series is engineered for efficiency in medium-power conversion systems. The inclusion of an integrated diode reduces board space and assembly complexity compared to discrete component arrangements.
Replacement Considerations
Check for direct substitutes such as the IXGA12N100U1 or IXGH10N100A, ensuring package footprint and pin configuration match exactly. Verify that alternative devices meet or exceed the original 1000V blocking voltage and 12A current ratings.
