IXGP12N60C

IXGP12N60C

  • Description:IGBT 600V 24A TO-220-3
  • Series:HiPerFAST™

SKU:4ad687ca6924 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 24A TO-220-3
  • Series:HiPerFAST™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):24 A
  • Current - Collector Pulsed (Icm):48 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 12A
  • Power - Max:100 W
  • Switching Energy:90µJ (off)
  • Input Type:Standard
  • Gate Charge:32 nC
  • Td (on/off) @ 25°C:20ns/60ns
  • Test Condition:480V, 12A, 18Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXGP12N60C

Overview

The IXGP12N60C is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 20A at 25°C. The device utilizes a standard gate configuration with a maximum gate-emitter voltage of ±20V. Packaged in a TO-220AB three-pin through-hole housing, it supports a junction temperature range from -55°C to +150°C. This component is designed for general-purpose switching applications requiring robust performance within the specified electrical limits.

Feature Summary

  • Single N-channel IGBT configuration for discrete switching control
  • Standard gate drive compatibility with ±20V maximum rating
  • Through-hole mounting via TO-220AB package for thermal management

Applications

  • General purpose power switching circuits
  • Motor drive output stages
  • Inverter bridge legs

Procurement Notes

Verify the specific manufacturer datasheet for the exact saturation voltage and switching energy parameters, as listings may vary slightly between sources. Confirm the package type matches the design requirements, as some similar part numbers utilize different housings. Ensure the component meets RoHS compliance standards required for the target assembly process before finalizing procurement orders.

Selection Notes

Select this component when a 600V blocking capability and approximately 20A continuous current are required in a standard TO-220 package. Compare the on-state voltage drop against system efficiency targets. Verify that the gate drive circuit can supply the necessary charge without exceeding the ±20V limit. Consider thermal resistance characteristics if operating near maximum junction temperatures.

Part Context

This device belongs to the IXGP series of insulated gate bipolar transistors from IXYS. The series typically includes variants with different current ratings and voltage classes, all sharing common packaging and basic electrical interface characteristics. The '12' designation generally indicates the current class, while '60' denotes the voltage rating within the product family structure.

Replacement Considerations

The IXGP12N60CD1 is a documented variant within the same series offering a higher current rating of 24A. Both devices share the 600V voltage rating and TO-220AB package. Verify pinout compatibility and thermal requirements when substituting, as the D1 suffix may indicate specific manufacturing revisions or enhanced performance metrics.

IXGP12N60CIXGP12N60C

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