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The IXGP15N120B is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-220-3 through-hole package and supports a maximum collector-emitter voltage of 1.2 kV with a continuous collector current of 30 A. The device exhibits a collector-emitter saturation voltage of 3.2 V at rated conditions. It operates within a junction temperature range of -55°C to +150°C and includes an integrated anti-parallel diode.
Verify component authenticity and datasheet revisions before integration. Confirm RoHS compliance status via official documentation. Check for obsolete status indicators as the product may be restricted for new designs. Ensure supply chain stability due to potential discontinuation risks associated with legacy series components.
Select this component for applications requiring 1200 V blocking voltage and moderate current handling up to 30 A. The TO-220-3 package limits thermal dissipation compared to larger modules, necessitating adequate heatsinking. Consider alternative higher-current variants if system demands exceed the specified continuous collector current rating.
This IGBT belongs to the IXGP15N120 series from IXYS, designed for general-purpose high-voltage switching. It utilizes silicon technology optimized for efficiency in medium-power conversion circuits. The component represents a standard discrete solution for industrial power electronics where modular complexity is unnecessary.
Direct pin-compatible substitutes include the IXGP20N120B, which offers higher current capacity within the same package. Verify electrical parameter compatibility and thermal characteristics when transitioning between these specific part numbers.