IXGP15N120C

Overview

The IXGP15N120C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-220-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.2 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 140 W. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

• Single channel configuration utilizing Silicon IGBT technology
• High voltage capability with 1.2 kV collector-emitter breakdown
• Through-hole mounting in a standard TO-220-3 package

Applications

• Industrial motor drives
• Switching power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix 'C' against official manufacturer documentation, as datasheets often list the base model 'IXGP15N120B'. Confirm RoHS compliance status and ensure the part number matches the exact revision required for your design. Check for any recommended replacement notices if the component is marked as not recommended for new designs.

Selection Notes

Select this component for applications requiring high-voltage switching with moderate current handling capabilities up to 30 A. Ensure the thermal management system can handle the specified 140 W power dissipation. Verify that the gate drive circuitry supports the required ±20 V limits and that the TO-220-3 package fits the PCB layout constraints.

Part Context

This part belongs to the IXGP series of single IGBTs from IXYS, characterized by their robustness in medium-power industrial applications. The series typically offers a balance between switching speed and conduction losses, suitable for general-purpose high-voltage switching tasks where cost-effectiveness and reliability are prioritized over ultra-high-frequency performance.