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The IXGP20N120B is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-220-3 through-hole package configuration. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 40 A. Electrical specifications include a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range from -55 °C to +150 °C.
Verify the exact suffix, such as 'B', against official datasheets, as it may indicate specific electrical tolerances or packaging variations. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the ordering quantity aligns with factory tube quantities, typically 50 units per tube, to avoid partial reel issues.
Select this component when a 1.2 kV blocking voltage and 40 A continuous current rating are required in a through-hole format. Compare the saturation voltage characteristics against alternative models like the IXGP15N120B if lower current but potentially different switching trade-offs are acceptable. Verify that the thermal management solution supports the specified operating temperature limits.
This part belongs to the IXYS IXGP series of single IGBT transistors designed for medium-power applications. The series utilizes silicon technology to provide reliable switching performance. The TO-220-3 package is a standard industry form factor widely used in discrete power electronics designs requiring robust mechanical mounting and heat dissipation capabilities.
The IXGP15N120B is a related model within the same series offering 30 A current capacity. Verify pinout compatibility and thermal resistance differences before substitution. No other direct public substitutes are confirmed.