IXGP20N120

IXGP20N120

  • Description:IGBT PT 1200V 40A TO-220-3
  • Series:-

SKU:608edd6224b2 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 1200V 40A TO-220-3
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 20A
  • Power - Max:150 W
  • Switching Energy:6.5mJ (off)
  • Input Type:Standard
  • Gate Charge:63 nC
  • Td (on/off) @ 25°C:28ns/400ns
  • Test Condition:800V, 20A, 47Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXGP20N120

Overview

The IXGP20N120B is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-220-3 through-hole package configuration. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 40 A. Electrical specifications include a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range from -55 °C to +150 °C.

Feature Summary

  • Single N-channel IGBT structure for high-voltage switching applications
  • Robust thermal performance with a maximum junction temperature of 150 °C
  • Through-hole mounting capability in a standard TO-220-3 package

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Inverter circuits

Procurement Notes

Verify the exact suffix, such as 'B', against official datasheets, as it may indicate specific electrical tolerances or packaging variations. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the ordering quantity aligns with factory tube quantities, typically 50 units per tube, to avoid partial reel issues.

Selection Notes

Select this component when a 1.2 kV blocking voltage and 40 A continuous current rating are required in a through-hole format. Compare the saturation voltage characteristics against alternative models like the IXGP15N120B if lower current but potentially different switching trade-offs are acceptable. Verify that the thermal management solution supports the specified operating temperature limits.

Part Context

This part belongs to the IXYS IXGP series of single IGBT transistors designed for medium-power applications. The series utilizes silicon technology to provide reliable switching performance. The TO-220-3 package is a standard industry form factor widely used in discrete power electronics designs requiring robust mechanical mounting and heat dissipation capabilities.

Replacement Considerations

The IXGP15N120B is a related model within the same series offering 30 A current capacity. Verify pinout compatibility and thermal resistance differences before substitution. No other direct public substitutes are confirmed.

IXGP20N120IXGP20N120

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