IXGP30N60B4D1

IXGP30N60B4D1

  • Description:IGBT PT 600V 56A TO-220-3
  • Series:-

SKU:bf40ade2c8ed Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT PT 600V 56A TO-220-3
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):56 A
  • Current - Collector Pulsed (Icm):156 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 24A
  • Power - Max:190 W
  • Switching Energy:440µJ (on), 700µJ (off)
  • Input Type:Standard
  • Gate Charge:77 nC
  • Td (on/off) @ 25°C:21ns/200ns
  • Test Condition:400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr):30 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Download product information

IXGP30N60B4D1

Overview

The IXGP30N60B4D1 is a high-voltage N-channel IGBT module from the IXYS B4 series, designed for industrial power conversion applications. It features a planar trench gate technology that enhances switching performance and reduces conduction losses compared to previous generations. The device integrates an anti-parallel fast recovery diode within the same package, providing a compact solution for half-bridge configurations. Key electrical characteristics include a collector-emitter voltage rating of 600V and a continuous collector current capability suitable for medium-power inverter designs.

Feature Summary

  • Planar trench gate IGBT technology for optimized switching speed and low conduction loss
  • Integrated anti-parallel fast recovery diode for simplified half-bridge circuit design
  • High thermal stability and robust short-circuit withstand capability

Applications

  • Industrial motor drives and servo amplifiers
  • Uninterruptible power supplies (UPS) systems
  • Switched-mode power supplies (SMPS)
  • Welding equipment inverters

Procurement Notes

Verify the specific suffix 'D1' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal interface specifications. Ensure the ordering code matches the exact package variant required for your heatsink mounting system. Cross-reference the date code and lot number with quality assurance requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a balance between low on-state voltage drop and fast switching times at 600V ratings. Consider the thermal resistance values provided in the datasheet to determine appropriate heatsinking strategies. Evaluate the reverse recovery charge of the integrated diode if operating at high frequencies to minimize switching losses.

Part Context

This module belongs to the IXYS B4 family of insulated gate bipolar transistors, which utilizes advanced trench gate technology to improve efficiency over older planar designs. The B4 series is widely recognized for its reliability in demanding industrial environments, offering improved figure-of-merit metrics compared to standard IGBTs.

Replacement Considerations

Check for direct cross-references such as IXGH30N60B4 or similar B4 series variants with identical pinouts and electrical ratings. Verify that any substitute part maintains the same package dimensions and thermal characteristics to ensure mechanical fit without redesigning the PCB or heatsink assembly.

IXGP30N60B4D1IXGP30N60B4D1

Click on the inquiry