IXGP36N60A3

Overview

The IXGP36N60A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3™ product line. It utilizes advanced Punch-Through (PT) technology to optimize performance for power conversion applications. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 36 A at 25°C. Designed as an A3-Class component, it is optimized for low saturation voltage, making it suitable for switching frequencies up to 5 kHz. The transistor is housed in a TO-220-3 package with through-hole mounting capabilities.

Feature Summary

• GenX3™ Punch-Through Technology
• Low Saturation Voltage Optimization
• Single Configuration

Applications

• Power Conversion Systems
• Switching Applications up to 5 kHz
• Industrial Inverters

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Ensure the source provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when low conduction losses are prioritized over switching speed. The A3 classification targets applications operating below 5 kHz. Evaluate thermal management requirements based on the TO-220-3 package limitations and the specific duty cycle of the intended circuit design.

Part Context

This part belongs to the IXGP48/IXGP36 family of 600V GenX3™ IGBTs. It shares the same technological foundation as higher-current variants but offers reduced current handling capacity. The A3 subclass specifically balances static and dynamic losses for cost-effective medium-frequency operation.

Replacement Considerations

Direct pin-compatible substitutes within the same GenX3™ family include other A3-class devices with similar voltage ratings. Verify electrical parameters such as Vce(sat) and switching times before substituting with non-IXYS components.