IXGP42N30C3

IXGP42N30C3

  • Description:IGBT PT 300V TO-220-3
  • Series:GenX3™

SKU:a6e6154319b4 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 300V TO-220-3
  • Series:GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):250 A
  • Vce(on) (Max) @ Vge, Ic:1.85V @ 15V, 42A
  • Power - Max:223 W
  • Switching Energy:120µJ (on), 150µJ (off)
  • Input Type:Standard
  • Gate Charge:76 nC
  • Td (on/off) @ 25°C:21ns/113ns
  • Test Condition:200V, 21A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXGP42N30C3

Overview

The IXGP42N30C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3™ series and utilizes Punch-Through (PT) technology. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a gate charge of 100 nC, an input capacitance of 3800 pF, and a typical saturation voltage of 2.2 V at 30 A. Thermal characteristics specify a maximum power dissipation of 450 W and a junction temperature range from -55°C to +150°C. The component is housed in a TO-220-3 package designed for through-hole mounting.

Feature Summary

  • GenX3™ trench gate technology optimized for low switching losses and high efficiency
  • Punch-Through (PT) design ensuring stable blocking voltage and robust short-circuit capability
  • High thermal performance with a maximum junction temperature rating of 150°C

Applications

  • Switch-mode power supplies (SMPS)
  • Motor control drives
  • Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against official IXYS documentation to confirm exact pinout and packaging configuration. Ensure that the procurement channel provides valid traceability data consistent with manufacturer standards. Cross-reference the part number with current datasheets to confirm active status or obsolescence before finalizing orders.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling up to 75A. Consider the 100 nC gate charge when designing drive circuits to optimize switching speed and minimize driver power loss. Evaluate thermal management requirements based on the 450W power dissipation limit and ensure adequate heatsinking for the TO-220-3 package.

Part Context

This IGBT is part of IXYS's GenX3™ family, which represents a generation of trench-gate devices offering improved switching characteristics compared to earlier planar technologies. The series is widely used in industrial power conversion where reliability and efficiency are critical. The TO-220-3 package provides a standard form factor for prototyping and medium-power commercial designs.

Replacement Considerations

Direct replacements must match the 600V/75A rating, TO-220-3 package, and similar gate charge specifications. Verify compatibility with existing drive voltages and thermal constraints. Consult manufacturer substitution guides for equivalent parts from IXYS or other vendors.

IXGP42N30C3IXGP42N30C3

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