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Product Detailed Parameters
- Description：IGBT 1000V 8A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：8:00 AM
- Current - Collector Pulsed (Icm)：16 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 4A
- Power - Max：40 W
- Switching Energy：900µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：20ns/390ns
- Test Condition：800V, 4A, 120Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP4N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage (VCEO) of 1 kV and a continuous collector current (Ic) of 8 A at 25°C. The device exhibits a typical on-state saturation voltage (VCE(sat)) of 2.7 V. It is housed in a TO-220-3 through-hole package with an operating temperature range from -55°C to +150°C.
Feature Summary
- High voltage blocking capability suitable for demanding power switching applications
- Robust thermal performance within a standard through-hole mounting configuration
- Designed for efficient conduction with low saturation voltage characteristics
Applications
- Switch-mode power supplies
- Motor control circuits
- Inverter systems
Procurement Notes
Verify component authenticity due to the discontinued status of this part number. Confirm that the specific lot date codes meet project requirements, as availability may be limited to surplus or secondary market sources. Ensure proper handling procedures are followed during installation to prevent electrostatic discharge damage to the gate terminal.
Selection Notes
Select this component when a 1 kV rated IGBT with moderate current capacity is required in a TO-220 package. Consider the trade-off between the 2.7 V saturation voltage and switching losses for the target application frequency. Evaluate thermal management solutions based on the specified junction temperature limits and ambient conditions.
Part Context
This device belongs to the IXYS IGBT transistor family, designed for general-purpose high-voltage switching. The TO-220-3 package provides a balance between electrical isolation and thermal dissipation for medium-power electronics. It serves as a discrete solution for replacing integrated modules in cost-sensitive designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer cross-reference guides or engineering support for validated alternatives compatible with the 1 kV / 8 A specification.
