IXGP7N60C

Overview

IXGP7N60C is a single silicon IGBT from the HiPerFAST Lightspeed series by IXYS. It features a TO-220-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C. The device has a power dissipation rating of 54 W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate-emitter leakage current of 100 nA, a saturation voltage of 2.5 V at 15 V gate drive and 7 A collector current, and a switching time of 19 ns turn-on and 60 ns turn-off under standard test conditions.

Feature Summary

• Utilizes HiPerFAST technology for optimized low conduction losses
• Features square reverse bias safe operating area (RBSOA)
• Designed for high power density applications
• Requires low gate drive requirements

Applications

• Power inverters
• Uninterruptible power supplies (UPS)
• Motor drives

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the specific lot matches the required RoHS compliance status. Ensure thermal management solutions align with the 54 W power dissipation limit. Check for any recent product change notices or obsolescence announcements directly from the manufacturer. Validate pinout compatibility with existing PCB footprints.

Selection Notes

Select this component for applications requiring moderate current handling up to 14 A with a 600 V blocking capability. The TO-220-3 package suits through-hole mounting constraints. Consider the 2.5 V saturation voltage for efficiency calculations in low-frequency switching scenarios. Evaluate thermal resistance requirements based on the 54 W dissipation rating and ambient operating temperatures.

Part Context

The IXGP7N60C belongs to the HiPerFAST Lightspeed series, designed for general-purpose power switching. It represents a single-chip IGBT solution distinct from module-based configurations. The device integrates standard gate control interfaces compatible with common driver circuits. Its classification as a discrete semiconductor facilitates straightforward replacement in legacy designs.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Similar alternatives may include other 600V 14A TO-220-3 IGBTs from IXYS or competitors, but functional equivalence must be verified against specific electrical parameters.