IXGQ200N30PB

IXGQ200N30PB

  • Description:IGBT 300V 400A TO-3P
  • Series:-

SKU:c2547c5bea65 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 300V 400A TO-3P
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Current - Collector (Ic) (Max):400 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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IXGQ200N30PB

Overview

The IXGQ200N30PB is a silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS G-series. It features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 200A at 25°C. The device utilizes trench gate technology for optimized switching performance. It is housed in a TO-247 package with a maximum junction temperature of 175°C.

Feature Summary

  • Trench gate IGBT technology for low saturation voltage
  • Square reverse bias safe operating area (RBSOA)
  • High short-circuit capability

Applications

  • Induction heating systems
  • Uninterruptible power supplies (UPS)
  • Motor control drives

Procurement Notes

Verify component authenticity through authorized channels due to the NRND status. Confirm package integrity and pin alignment against official datasheets. Check for manufacturing date codes relevant to supply chain stability. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.

Selection Notes

Select this component for high-current applications requiring robust switching characteristics. Evaluate thermal management requirements given the 200A rating. Consider the NRND status for long-term project viability. Compare total cost of ownership including potential obsolescence risks against available alternatives.

Part Context

This part belongs to the IXYS G-series, which includes GenX5 trench IGBTs designed for high efficiency. The series targets industrial power conversion needs. The specific model integrates fast recovery diode characteristics suitable for hard-switching topologies.

Replacement Considerations

Publicly confirmed direct substitutes include the IXGH200N30B3D1. Verify pinout compatibility and electrical parameter equivalence before substitution.

IXGQ200N30PBIXGQ200N30PB

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