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Product Detailed Parameters
- Description：IGBT 300V 240A TO-3P
- Series：Polar™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Current - Collector (Ic) (Max)：240 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 120A
- Power - Max：500 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：225 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The IXGQ240N30PB is an N-channel Power MOSFET manufactured by IXYS. It features a 300V drain-source breakdown voltage and a continuous drain current of 240A at 25°C, with a maximum on-resistance of 6.8mΩ. The device utilizes the Polar3 technology for enhanced performance. It is housed in a TO-3P package designed for through-hole mounting. The component supports a maximum power dissipation of 1700W and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Utilizes Polar3 technology for high-performance switching capabilities
- Features avalanche-rated construction for robust operation under stress
- Incorporates a fast intrinsic rectifier diode for efficient commutation
Applications
- High-power motor drive systems
- Industrial power supply inverters
- DC-DC converter circuits
Procurement Notes
Verify the specific manufacturer datasheet for the IXGQ240N30PB to confirm current production status and detailed electrical characteristics. Ensure that the ordering suffix matches the required package variant and thermal specifications. Cross-reference official documentation to validate compliance with relevant environmental standards before procurement.
Selection Notes
Select this component for applications requiring high current handling and low conduction losses at moderate voltages. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the specified power dissipation. Confirm that the gate charge requirements align with the driving circuit capabilities for optimal switching efficiency.
Part Context
This part belongs to the IXYS Polar3 series of N-channel MOSFETs. These devices are engineered for high-efficiency power conversion applications. The series is characterized by advanced trench gate technology and rugged avalanche performance, distinguishing it from standard MOSFET offerings in the IXYS portfolio.
Replacement Considerations
Consult official IXYS substitution guides or distributor cross-reference tools for verified equivalent parts. Ensure any replacement maintains compatibility with the TO-3P package and meets or exceeds the original voltage and current ratings.
