IXGQ90N33TCD1

IXGQ90N33TCD1

$2.95
  • Description:IGBT TRENCH 330V 90A TO-3P
  • Series:-

SKU:f0a866eb065a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 330V 90A TO-3P
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):330 V
  • Current - Collector (Ic) (Max):90 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 45A
  • Power - Max:200 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:69 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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IXGQ90N33TCD1

Overview

The IXGQ90N33TCD1 is a trench gate IGBT transistor manufactured by IXYS. It features a collector-emitter voltage rating of 330 V and a continuous collector current capacity of 360 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.80 V. It utilizes a TO-3P package for through-hole mounting, supporting high-power applications with robust thermal performance.

Feature Summary

  • Employs trench gate technology for enhanced switching speed and low conduction losses.
  • Designed for plasma display power supplies requiring high current handling capabilities.
  • Features a rugged TO-3P package suitable for direct heatsink mounting.

Applications

  • Plasma display power supplies
  • High-current inverter circuits
  • Industrial motor drives

Procurement Notes

Verify the specific suffix TCD1 against official datasheets to confirm pinout and packaging variations. Confirm RoHS compliance status as required by project specifications. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring 330V blocking capability and high continuous current. Ensure the thermal management system can handle the power dissipation associated with 360A operation. Verify gate drive compatibility with the specified threshold characteristics.

Part Context

This part belongs to the IXGQ series of trench gate IGBTs from IXYS. These devices are engineered for efficiency in medium-voltage power conversion systems. The series emphasizes low saturation voltage and fast switching times compared to standard planar technologies.

Replacement Considerations

Consult official substitution guides for equivalent trench gate IGBTs with matching 330V and 360A ratings. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.

IXGQ90N33TCD1IXGQ90N33TCD1
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