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The IXGQ90N33TCD1 is a trench gate IGBT transistor manufactured by IXYS. It features a collector-emitter voltage rating of 330 V and a continuous collector current capacity of 360 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.80 V. It utilizes a TO-3P package for through-hole mounting, supporting high-power applications with robust thermal performance.
Verify the specific suffix TCD1 against official datasheets to confirm pinout and packaging variations. Confirm RoHS compliance status as required by project specifications. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.
Select this component for designs requiring 330V blocking capability and high continuous current. Ensure the thermal management system can handle the power dissipation associated with 360A operation. Verify gate drive compatibility with the specified threshold characteristics.
This part belongs to the IXGQ series of trench gate IGBTs from IXYS. These devices are engineered for efficiency in medium-voltage power conversion systems. The series emphasizes low saturation voltage and fast switching times compared to standard planar technologies.
Consult official substitution guides for equivalent trench gate IGBTs with matching 330V and 360A ratings. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.