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The IXYS IXGR16N170AH1 is a high-voltage IGBT with an integrated SONIC-FRDTM fast recovery copack diode, housed in the ISOPLUS247 package. It features an electrically isolated tab and rugged NPT structure. Key electrical parameters include a collector-emitter voltage (VCES) of 1700 V, continuous collector current (IC25) of 16 A at 25°C, and saturation voltage (VCE(sat)) of 5.0 V. The device supports a maximum junction temperature of 150°C and offers isolation voltage of 2500 Vrms.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision DS99232(11/04) matches physical markings. Check for ISOPLUS247 package integrity and isolated tab insulation compliance. Ensure storage conditions maintain moisture sensitivity level requirements prior to soldering.
Select this component for applications requiring high blocking voltage and integrated fast recovery diodes. The ISOPLUS247 package provides robust mechanical mounting and thermal performance. Consider the 16A continuous current rating and 1700V breakdown voltage for industrial power conversion systems. Evaluate switching energy losses against thermal resistance specifications for heat sink design.
This part belongs to the IXGR series of high-voltage IGBTs with integrated diodes. It utilizes the ISOPLUS247 outline, distinguishing it from standard TO-247 packages by its isolated tab design. The 'H1' suffix typically denotes specific manufacturing revisions or packaging variations within the IXYS portfolio, though functional parameters remain consistent with the base IXGR16N170AH1 specification.
Direct substitutes require matching 1700V rating, 16A current, and ISOPLUS247 package. Verify integrated diode characteristics if present. Cross-reference thermal resistance values and pinout compatibility before implementation.
The typical reverse recovery time (trr) is 150 ns under specified test conditions.
No, the tab is electrically isolated from the collector, providing an isolation voltage of 2500 Vrms.
The continuous gate-emitter voltage is ±20 V, with a transient limit of ±30 V.