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The IXGR32N170H1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by IXYS. It features a rugged NPT structure and is housed in a TO-268AA surface-mount package. The device supports a collector-emitter voltage of 1700 V and a continuous collector current of 32 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 4.5 V at 16 A and a gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -55°C to +150°C junction temperature.
Verify the specific suffix H1 against official IXYS documentation to confirm pinout and thermal characteristics. Ensure compatibility with TO-268AA mounting requirements. Check for RoHS compliance status in the latest datasheet revision. Confirm availability through authorized distributors as lead times may vary. Validate that the integrated diode specifications meet circuit design requirements.
Select this component for high-voltage applications requiring 1700 V blocking capability and moderate current levels up to 32 A. The surface-mount TO-268AA package suits designs needing compact footprints with adequate thermal dissipation. Consider the NPT technology for improved short-circuit ruggedness compared to earlier generations. Evaluate switching losses against system efficiency targets given the 4.5 V saturation voltage.
This IGBT belongs to the IXGR series of high-voltage devices from IXYS, designed for industrial power conversion. It complements other models like the IXGX32N170H1, which shares similar electrical ratings but may differ in packaging or specific thermal metrics. The series targets applications where reliability and high voltage tolerance are critical, such as inverter and converter topologies.
Publicly confirmed substitute part numbers were not identified in the provided source material. Verify cross-references with IXYS technical support or updated distributor catalogs before implementation.