IXGR35N120B

IXGR35N120B

  • Description:IGBT PT 1200V 70A ISOPLUS247
  • Series:HiPerFAST™

SKU:1da4aa6df955 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 1200V 70A ISOPLUS247
  • Series:HiPerFAST™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):70 A
  • Current - Collector Pulsed (Icm):140 A
  • Vce(on) (Max) @ Vge, Ic:3.3V @ 15V, 35A
  • Power - Max:200 W
  • Switching Energy:3.8mJ (off)
  • Input Type:Standard
  • Gate Charge:170 nC
  • Td (on/off) @ 25°C:50ns/180ns
  • Test Condition:960V, 35A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:ISOPLUS247™
  • Grade:-
  • Qualification:-

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IXGR35N120B

Overview

The IXGR35N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 35 A at 25°C. The device utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • High-voltage capability with 1200 V blocking voltage for robust switching performance.
  • Integrated anti-parallel diode functionality for efficient commutation in bridge configurations.
  • Surface-mount D3PAK-3 packaging designed for automated assembly and thermal management.

Applications

  • AC motor speed control systems
  • DC servo and robot drives
  • Uninterruptible power supplies (UPS)
  • Switch-mode and resonant-mode power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified agents. Request original manufacturer datasheets and test reports to confirm specifications match the part number. Ensure compliance with RoHS directives and check for specific ordering suffixes that may affect packaging or pinout configuration before finalizing procurement orders.

Selection Notes

Select this IGBT for applications requiring high voltage isolation and moderate current handling in compact designs. Compare saturation voltage and switching times against alternative TO-268 packages if thermal constraints differ. Ensure gate drive circuits support the specified voltage limits and consider heat sinking requirements based on the 300 W dissipation rating under actual operating conditions.

Part Context

This component belongs to the IXGR series of high-voltage IGBTs from IXYS, designed for general-purpose power switching. It shares the D3PAK-3 form factor with other IXYS devices like the IXGT30N120B3D1 but offers distinct current ratings. The series targets industrial and consumer electronics markets needing reliable solid-state switching solutions.

Replacement Considerations

Direct substitutes include the IXSK35N120BD1, which shares similar voltage and current ratings. Verify pin compatibility and thermal resistance values when replacing with variants from the IXYS IXGR or IXSK families to ensure circuit integrity without redesigning the PCB layout.

IXGR35N120BIXGR35N120B

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