SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGR35N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 35 A at 25°C. The device utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or certified agents. Request original manufacturer datasheets and test reports to confirm specifications match the part number. Ensure compliance with RoHS directives and check for specific ordering suffixes that may affect packaging or pinout configuration before finalizing procurement orders.
Select this IGBT for applications requiring high voltage isolation and moderate current handling in compact designs. Compare saturation voltage and switching times against alternative TO-268 packages if thermal constraints differ. Ensure gate drive circuits support the specified voltage limits and consider heat sinking requirements based on the 300 W dissipation rating under actual operating conditions.
This component belongs to the IXGR series of high-voltage IGBTs from IXYS, designed for general-purpose power switching. It shares the D3PAK-3 form factor with other IXYS devices like the IXGT30N120B3D1 but offers distinct current ratings. The series targets industrial and consumer electronics markets needing reliable solid-state switching solutions.
Direct substitutes include the IXSK35N120BD1, which shares similar voltage and current ratings. Verify pin compatibility and thermal resistance values when replacing with variants from the IXYS IXGR or IXSK families to ensure circuit integrity without redesigning the PCB layout.