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The IXYS IXGR50N60C2D1 is a single IGBT utilizing PT (Punch-Through) technology, housed in a TO-247AD package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. The device has a typical saturation voltage of 2.7 V at 40 A with a 15 V gate drive. Key switching parameters include a turn-on delay of 18 ns, a fall time of 115 ns, and an output capacitance energy loss of 380 µJ under test conditions of 480 V, 40 A, and 2 Ω. The total gate charge is 138 nC, and the component supports junction temperatures up to 150°C.
Verify the specific suffix D1 against official manufacturer documentation to confirm pinout and electrical tolerances. Confirm availability status as distribution listings may indicate obsolete or end-of-life status. Ensure the supplier provides original manufacturer traceability to avoid counterfeit components.
Select this component when a 600 V rating and 75 A continuous current are required in a standard TO-247 form factor. Compare the 2.7 V saturation voltage and 138 nC gate charge against alternative PT IGBTs to balance conduction losses against switching speed requirements for the target application frequency.
This part belongs to the IXGH/IXGR series of punch-through IGBTs from IXYS. These devices are engineered for general-purpose high-power switching applications. The numbering convention indicates a 50 Amp class device with a 600 V breakdown voltage within the IXYS portfolio.
Direct replacements include the IXGH50N60C2 and IXGT50N60C2. Verify that substitute packages match the thermal and mechanical requirements of the existing PCB layout.