IXGR60N60B2

Overview

The IXGR60N60B2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 75A at 25°C. The device utilizes the HiPerFAST technology with a GenX3 structure, offering a typical saturation voltage of 1.8V at 36A. It operates within a junction temperature range of -55°C to +150°C and is housed in an ISOPLUS247-3 surface-mount package.

Feature Summary

• HiPerFAST IGBT technology for optimized switching performance
• GenX3 trench gate structure for low conduction losses
• ISOPLUS247-3 package for high power density mounting

Applications

• Switch-mode power supplies
• DC choppers
• AC motor speed control

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Check RoHS compliance status and specific lot traceability requirements before integration. Confirm end-of-life status and availability constraints as supply conditions may vary significantly across regions.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling up to 75A. Ensure thermal management solutions support the specified operating temperature range. Verify gate drive compatibility with standard logic levels and check PCB layout constraints for the ISOPLUS247-3 footprint.

Part Context

This part belongs to the IXYS IXGR series of HiPerFAST IGBTs. It shares the ISOPLUS247-3 package form factor with other devices in the family but differs in current and voltage ratings. It serves as a discrete switching element in medium-power industrial and consumer electronics applications.

Replacement Considerations

Direct substitutes include IXGR60N60U1 and IXGH60N60B3. Verify pinout compatibility and thermal resistance values when replacing. Ensure the alternative device meets the same 600V/75A specifications and package dimensions.