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The IXGR72N60B3H1 is a single IGBT from the IXYS GenX3 series, housed in a D3PAK-3 (TO-268-3) surface-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. The device exhibits a maximum saturated collector-emitter voltage of 1.35 V under standard test conditions. Power dissipation reaches 540 W, with an operating junction temperature range spanning -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or certified supply chain partners. Confirm datasheet revisions and RoHS compliance status prior to integration. Ensure storage conditions meet moisture sensitivity level requirements to prevent package degradation during handling and soldering processes.
Select this component when a surface-mount IGBT with 600 V blocking capability is required. The TO-268-3 package offers thermal advantages over through-hole alternatives while maintaining comparable electrical ratings. Evaluate thermal resistance parameters against heatsink designs to ensure junction temperatures remain within specified operational limits during peak load cycles.
This part belongs to the IXYS GenX3 family of medium-speed IGBTs. The series combines low conduction losses with controlled switching speeds. The specific model utilizes a planar structure designed for robustness in industrial environments. It serves as a discrete alternative to module-based solutions for lower power density applications.
Direct pin-compatible substitutes include the IXGT72N60A3. Verify that thermal characteristics and switching energy values align with existing circuit designs before implementing any cross-references.