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The IXYS IXGR72N60C3 is a single IGBT module utilizing XPT technology, designed for high-efficiency power switching. It features a 600V collector-emitter voltage rating and a continuous collector current of 72A at 25°C. The device incorporates an integrated anti-parallel diode with a reverse recovery charge of 190nC. Packaged in the D2PAK-3 (TO-268) form factor, it supports screw mounting and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.6V and a gate-emitter leakage current of 200nA.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm technical specifications match the model number. Inspect packaging integrity upon receipt to prevent electrostatic discharge damage. Ensure compliance with RoHS directives if required by your manufacturing standards.
Select this component when a 600V rating and 72A continuous current are required in a compact surface-mountable package. Consider the 1.6V saturation voltage for efficiency calculations in low-voltage applications. Verify that the thermal management solution can handle the specified power dissipation at the intended operating junction temperature.
This part belongs to the IXYS IXGR series of XPT IGBT modules. The series is characterized by the use of epi-planar trench gate technology combined with plasma implantation for improved switching characteristics. It serves as a discrete solution for medium-power applications where module integration is preferred over bare dies.
Direct substitutes may include other IXYS models from the IXGR series with similar voltage and current ratings. Cross-referencing with competitors like Infineon or Mitsubishi requires matching Vceo, Ic, and package dimensions. Always verify pinout compatibility and thermal resistance values before substitution.